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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EFM101 THRU EFM106 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram DO-214AC MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.067 (1.70) 0.051 (1.29) 0.180(4.57) 0.160(4.06) 0.110 (2.79) 0.086 (2.18) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) 0.209 (5.31) 0.185 (4.70) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) 0.004 (0.102) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 15 -65 to + 175 EFM101 50 35 50 EFM102 100 70 100 EFM103 150 105 150 1.0 30 10 EFM104 200 140 200 EFM105 300 210 300 EFM106 400 280 400 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @TA = 25 o C @TA =150 o C SYMBOL VF IR trr EFM101 EFM102 EFM103 0.95 EFM104 EFM105 EFM106 1.25 UNITS Volts uAmps 50 35 nSec 2001-4 5.0 RATING AND CHARACTERISTIC CURVES ( EFM101 THRU EFM106 ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) PULSE GENERATOR AVERAGE FORWARD CURENT, (A) 50 NONINDUCTIVE 10 NON-INDUCTIVE FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A 1.0 (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 0 25 50 75 100 125 150 175 1cm SET TIME BASE FOR 5/10 ns/cm AMBIENT TEMPERATURE ( ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 100 TJ = 150 10 TJ = 100 1.0 4 M10 10 EF M1 05 ~E FM 6 1.0 .1 EFM 101 ~EF TJ = 25 TJ = 25 .1 .01 Pulse Width = 300uS 1% Duty Cycle .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT, (A) 70 60 50 40 TJ = 25 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) TJ = 25 30 20 10 0 .1 .5 1 2 5 10 20 50 100 200 400 NUMBER OF CYCLES AT 60Hz RECTRON |
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